'2s.ii.eu ^.ml-dondilctoi cx j una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFZ46 hexfet? power mosfet ? dynamic dv/dt rating ? 175c operating temperature ? fast switching ? ease of paralleling ? simple drive requirements vdss = 50v r ds(on) id = 50*a the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. absolute maximum ratings to-220ab id @ tc = 25c \9 tc= 100c i dm pd @ tc = 25c vgs eas dv/dt tj tstg parameter continuous drain current, vgs @ 1 0 v continuous drain current, vgs @ 10 v pulsed drain current ? power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy ? peak diode recovery dv/dt ? operating junction and storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw max. units 50* 38 220 150 1.0 20 100 4.5 -55 to +175 300 (1 .6mm from case) 10lbf-in(1.1 n.m) a w w/c v mj v/ns c thermal resistance rejc recs rwa parameter junction-to-case case-to-sink, flat, greased surface junction-to-ambient min. ? ? ? typ. ? 0.50 ? max. 1.0 ? 62 units c/w qualify semi-conductors
electrical characteristics @ tj = 25c (unless otherwise specified) v(br)dss av(br)dss/atj rds(on) vgs{th) flfe loss less qg qgs qgd ld(on) tr td(off) tf ld ls ciss coss crss parameter drain-to-source breakdown voltage breakdown voltage temp. coefficient static drain-to-source on-resistance gate threshold voltage forward transconductance drain-to-source leakage current min. 50 ? ? typ. ? 0.057 ? 2.0 ; ? 27 ; ? ? : ? ? gate-to-source forward leakage ? gate-to-source reverse leakage total gate charge gate-to-source charge gate-to-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance input capacitance output capacitance reverse transfer capacitance ? ? ? ? ? -- ^j ? ? ? ? ? ? ? ? ? ? ? ? ? 12 120 42 95 4.5 7.5 1800 960 160 max. ? ? 0.024 4.0 ? 25 250 100 -100 66 21 25 ? ? ? ? ? ? ? ? ? units v v/c 1 v s ha na nc ns nh pf test conditions vgs=ov, |d= 250ua reference to 25c, lo= 1ma vgs=10v, b=32a ? vds=vgs, b= 250|aa vds=25v, id=32a ? vds=50v, vgs=ov vds=48v, vcs=ov, tj=150c vgs=20v vgs=-20v b=54a vds=48v vgs=10v see fig. 6 and 13 ? vdd=28v id=54a rg=9.1q ro=0.49i see figure 10 ? between lead, p 6 mm (0.25in.) /t~~t\m package jj j*i ?) and center of vzi die contact s vgs=ov vds=25v /=1 .0mhz see figure 5 source-drain ratings and characteristics is ism vsd trr qrr ton parameter continuous source current (body diode) pulsed source current (body diode) ? diode forward voltage reverse recovery time reverse recovery charge forward turn -on time min. ? ? ?? ? ? typ. ? ? ? 66 0.17 max. 50* 220 2.5 99 0.31 units a v ns uc test conditions mosfet symbol ^_^ showing the /t1 ? ~ integral reverse gaj pl, p-n junction diode. d ;> s tj=25c, is=54a, vgs=ov ? tj=25c, if=54a di/dt=100a/fis ? intrinsic turn-on time is neglegible (turn-on is dominated by ls+ld) notes: ? repetitive rating; pulse width limited by max. junction temperature (see figure 11) ? vdd=25v, starting tj=25c, l=34^h rg=25o, las=54a (see figure 12) * current limited by the package, (die current =54a) , di/dt<250a/ns, tj<175c pulse width < 300 (is; duty cycle <2%.
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